absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 11 i d @ v gs = 10v, t c = 100c continuous drain current 7.0 i dm pulsed drain current 44 p d @ t c = 25c max. power dissipation 50 w linear derating factor 0.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 80 mj i ar avalanche current 11 a e ar repetitive avalanche energy 5.0 mj dv/dt peak diode recovery dv/dt a 5.0 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 (for 5 s) weight 0.89 g fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. o c a hexfet ? power mosfet IRFEA240 surface mount (lcc-28) 10/20/00 www.irf.com 1 200v, n-channel lcc-28 product summary part number bv dss r ds(on) i d IRFEA240 200v 0.18 w 11a features: n low r ds(on) n avalanche energy ratings n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n surface mount n light weight for footnotes refer to the last page pd - 93978
IRFEA240 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction-to-case 2.5 c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 11 i sm pulse source current (body diode) 44 v sd diode forward voltage 1.5 v t j = 25c, i s = 11a, v gs = 0v ? t rr reverse recovery time 470 ns t j = 25c, i f = 11a, di/dt 100a/ m s q rr reverse recovery charge 6.5 m cv dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1ma d bv dss / d t j temperature coefficient of breakdown 0.25 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.18 w v gs = 10v, i d = 11a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a g fs forward transconductance 6.0 s ( )v ds = 25v, i ds = 11a ? i dss zero gate voltage drain current 25 v ds = 160v ,v gs =0v 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 84 v gs =10v, i d = 11a q gs gate-to-source charge 17 nc v ds = 100v q gd gate-to-drain (miller) charge 41 t d (on) turn-on delay time 25 v dd = 100v, i d = 11a t r rise time 196 r g = 9.1 w t d (off) turn-off delay time 80 t f fall time 130 l s + l d total inductance 6.1 measured from the center of drain pad to center of source pad ciss input capacitance 1340 v gs = 0v, v ds = 25v c oss output capacitance 434 pf f = 1.0mhz c rss reverse transfer capacitance 134 na w ? nh ns m a
www.irf.com 3 IRFEA240 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 11a
IRFEA240 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 11 v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 0.2 0.7 1.2 1.7 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) a
www.irf.com 5 IRFEA240 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 2 4 6 8 10 12 t , case temperature ( c) i , drain current (a) c d
IRFEA240 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 10v . 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.0a 7.0a 11a
www.irf.com 7 IRFEA240 footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 10/00 ? repetitive rating; pulse width limited by maximum junction temperature. ? i sd 11a, di/dt 270 a/ m s, v dd 200v, t j 150c ? pulse width 400 m s; duty cycle 2% ? v dd = 25 v, starting t j = 25c, l=1.25mh peak i as = 11a, r g = 25 w case outline and dimensions lcc-28
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